Transistors

Ipd70r600p7s Marking 70s600p7 700v Coolmosª P7 Power Transistor Dpak Infineon

CoolMOS™ is a revolutionary technology for high-voltage power MOSFETs, designed according to the Super Junction (SJ) principle and developed by Infineon Technologies.

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Description

Description

The latest CoolMOS™ P7 series is an optimized platform, specially designed for cost-sensitive applications such as:

  • chargers,
  • adapters,
  • lighting,
  • televisions,
  • and other consumer electronic devices.

The new series offers all the advantages of a Super Junction MOSFET technology with high switching speed, combining excellent price/performance ratio with top ease of use. The technology meets the highest energy efficiency standards and supports high power density designs, enabling the production of extremely thin and compact devices.

Features

  • Extremely low losses thanks to very low values of the RDS(on) × Qg and RDS(on) × Eoss figures.
  • Excellent thermal performance.
  • Built-in diode for electrostatic discharge (ESD) protection.
  • Low switching losses (low Eoss).
  • Product certification according to JEDEC standards.

Advantages

  • Competitive cost-effective technology.
  • Lower operating temperature.
  • High resistance to electrostatic discharges (ESD).
  • Improved energy efficiency at higher switching frequencies.
  • Capability to design devices with high power density and small size.

Typical applications

Recommended for Flyback topologies, such as those used in:

  • chargers,
  • power supplies,
  • lighting applications,
  • and other similar applications.

Note

For connecting multiple MOSFETs in parallel arrangement, the use of ferrite beads on the gate or the use of separate totem-pole driver stages for each MOSFET is generally recommended.

Manufacturer

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Description

The latest CoolMOS™ P7 series is an optimized platform, specially designed for cost-sensitive applications such as:

  • chargers,
  • adapters,
  • lighting,
  • televisions,
  • and other consumer electronic devices.

The new series offers all the advantages of a Super Junction MOSFET technology with high switching speed, combining excellent price/performance ratio with top ease of use. The technology meets the highest energy efficiency standards and supports high power density designs, enabling the production of extremely thin and compact devices.

Features

  • Extremely low losses thanks to very low values of the RDS(on) × Qg and RDS(on) × Eoss figures.
  • Excellent thermal performance.
  • Built-in diode for electrostatic discharge (ESD) protection.
  • Low switching losses (low Eoss).
  • Product certification according to JEDEC standards.

Advantages

  • Competitive cost-effective technology.
  • Lower operating temperature.
  • High resistance to electrostatic discharges (ESD).
  • Improved energy efficiency at higher switching frequencies.
  • Capability to design devices with high power density and small size.

Typical applications

Recommended for Flyback topologies, such as those used in:

  • chargers,
  • power supplies,
  • lighting applications,
  • and other similar applications.

Note

For connecting multiple MOSFETs in parallel arrangement, the use of ferrite beads on the gate or the use of separate totem-pole driver stages for each MOSFET is generally recommended.

Manufacturer